|
|
Other articles related with "junctionless nanowire transistor"：
|
|
17701 |
Yang-Yan Guo(郭仰岩), Wei-Hua Han(韩伟华), Xiao-Di Zhang(张晓迪), Jun-Dong Chen(陈俊东), and Fu-Hua Yang(杨富华) |
| |
|
Observation of source/drain bias-controlled quantum transport spectrum in junctionless silicon nanowire transistor |
| |
|
|
Chin. Phys. B
2022 Vol.31 (1): 17701-017701
[Abstract]
(450)
[HTML 1 KB]
[PDF 3301 KB]
(109)
|
|
|
38104 |
Liu-Hong Ma(马刘红), Wei-Hua Han(韩伟华), Fu-Hua Yang(杨富华) |
| |
|
Coulomb blockade and hopping transport behaviors of donor-induced quantum dots in junctionless transistors |
| |
|
|
Chin. Phys. B
2020 Vol.29 (3): 38104-038104
[Abstract]
(576)
[HTML 1 KB]
[PDF 2676 KB]
(177)
|
|
|
107303 |
Yang-Yan Guo(郭仰岩), Wei-Hua Han(韩伟华), Xiao-Song Zhao(赵晓松), Ya-Mei Dou(窦亚梅), Xiao-Di Zhang(张晓迪), Xin-Yu Wu(吴歆宇), Fu-Hua Yang(杨富华) |
| |
|
Observation of hopping transitions for delocalized electrons by temperature-dependent conductance in siliconjunctionless nanowire transistors |
| |
|
|
Chin. Phys. B
2019 Vol.28 (10): 107303-107303
[Abstract]
(534)
[HTML 1 KB]
[PDF 1057 KB]
(126)
|
|
|
97310 |
Xiao-Song Zhao(赵晓松), Wei-Hua Han(韩伟华), Yang-Yan Guo(郭仰岩), Ya-Mei Dou(窦亚梅), Fu-Hua Yang(杨富华) |
| |
|
Transport spectroscopy through dopant atom array in silicon junctionless nanowire transistors |
| |
|
|
Chin. Phys. B
2018 Vol.27 (9): 97310-097310
[Abstract]
(594)
[HTML 1 KB]
[PDF 2113 KB]
(146)
|
|
|
88106 |
Liu-Hong Ma(马刘红), Wei-Hua Han(韩伟华), Xiao-Song Zhao(赵晓松), Yang-Yan Guo(郭仰岩), Ya-Mei Dou(窦亚梅), Fu-Hua Yang(杨富华) |
| |
|
Influence of dopant concentration on electrical quantum transport behaviors in junctionless nanowire transistors |
| |
|
|
Chin. Phys. B
2018 Vol.27 (8): 88106-088106
[Abstract]
(727)
[HTML 0 KB]
[PDF 2083 KB]
(194)
|
|
|
108102 |
Hao Wang(王昊), Wei-Hua Han(韩伟华), Xiao-Song Zhao(赵晓松), Wang Zhang(张望), Qi-Feng Lyu(吕奇峰), Liu-Hong Ma(马刘红), Fu-Hua Yang(杨富华) |
| |
|
Electric-field-dependent charge delocalization from dopant atoms in silicon junctionless nanowire transistor |
| |
|
|
Chin. Phys. B
2016 Vol.25 (10): 108102-108102
[Abstract]
(661)
[HTML 1 KB]
[PDF 1432 KB]
(385)
|
|
|
68103 |
Liu-Hong Ma(马刘红), Wei-Hua Han(韩伟华), Hao Wang(王昊), Qi-feng Lyu(吕奇峰), Wang Zhang(张望), Xiang Yang(杨香), Fu-Hua Yang(杨富华) |
| |
|
Electronic transport properties of silicon junctionless nanowire transistors fabricated by femtosecond laser direct writing |
| |
|
|
Chin. Phys. B
2016 Vol.25 (6): 68103-068103
[Abstract]
(695)
[HTML 1 KB]
[PDF 1793 KB]
(379)
|
|
|
128101 |
Ma Liu-Hong (马刘红), Han Wei-Hua (韩伟华), Wang Hao (王昊), Yang Xiang (杨香), Yang Fu-Hua (杨富华) |
| |
|
Charge trapping in surface accumulation layer of heavily doped junctionless nanowire transistors |
| |
|
|
Chin. Phys. B
2015 Vol.24 (12): 128101-128101
[Abstract]
(800)
[HTML 1 KB]
[PDF 1597 KB]
(410)
|
|
|
88107 |
Wang Hao (王昊), Han Wei-Hua (韩伟华), Ma Liu-Hong (马刘红), Li Xiao-Ming (李小明), Yang Fu-Hua (杨富华) |
| |
|
Quantum transport characteristics in single and multiple N-channel junctionless nanowire transistors at low temperatures |
| |
|
|
Chin. Phys. B
2014 Vol.23 (8): 88107-088107
[Abstract]
(550)
[HTML 1 KB]
[PDF 1831 KB]
(470)
|
| First page | Previous Page | Next Page | Last Page | Page 1 of 1 |
|
|
